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HiPerFET TM
Power MOSFETs
Single Die MOSFET
IXFN 36N100
V DSS
I D25
R DS(on)
= 1000V
= 36A
= 0.24 Ω
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t rr
G
S
S
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
V DSS
V DGR
V GS
V GSM
I D25
I DM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M Ω
Continuous
Transient
T C = 25 ° C, Chip capability
T C = 25 ° C, pulse width limited by T JM
1000
1000
± 20
± 30
36
144
V
V
V
V
A
A
E153432
G
S
D
S
I AR
E AR
T C = 25 ° C
T C = 25 ° C
36
64
A
mJ
G = Gate
S = Source
D = Drain
TAB = Drain
E AS
dv/dt
P D
T J
T JM
T stg
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 Ω
T C = 25 ° C
4
5
700
-55 ... +150
150
-55 ... +150
J
V/ns
W
° C
° C
° C
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
? International standard packages
? miniBLOC, with Aluminium nitride
isolation
? Low R DS (on) HDMOS TM process
V ISOL
M d
Weight
50/60 Hz, RMS t = 1 min
I ISOL ≤ 1 mA t=1s
Mounting torque
Terminal connection torque
2500 V~
3000 V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
? Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
? DC-DC converters
? Battery chargers
? Switched-mode and resonant-mode
V DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 3 mA
V DS = V GS , I D = 8 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ≤ 300 μ s,
duty cycle d ≤ 2 %
T J = 25 ° C
T J = 125 ° C
1000
3.0
5.5
± 200
100
2
0.24
V
V
nA
μ A
mA
Ω
power supplies
? DC choppers
? Temperature and lighting controls
Advantages
? Easy to mount
? Space savings
? High power density
? 2003 IXYS All rights reserved
DS98520D(04/03)
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